rev 1.3b 4/7/2005 microsemi inc. copyright ? 1997 11861 western avenue garden grove, ca 92841 1 (714) 898-8121 fax: (714) 893-2570 description the sg2000 series integrates seven npn darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. all units feature open collector outputs with greater than 50v breakdown voltages combined with 500ma current carrying capabilities. five different input configurations provide optimized designs for interfacing with dtl, ttl, pmos, or cmos drive signals. these devices are designed to operate from -55c to 125c ambient temperature in a 16 pin dual in line ceramic (j) package and 20 pin leadless chip carrier (lcc). the plastic dual inCline (n) is designed to operate over the commercial temperature range of 0 c to 70c. features seven npn darlington pairs -55c to 125c ambient operating temperature range collector currents to 600ma output voltages from 50v to 95v internal clamping diodes for inductive loads dtl, ttl, pmos, or cmos compatible inputs hermetic ceramic package high reliability features available to mil-std-883 and desc smd mil-m38510/14101bea - jan2001j mil-m38510/14102bea - jan2002j mil-m38510/14103bea - jan2003j mil-m38510/14104bea - jan2004j radiation data available lmi level "s" processing available high voltage medium current driver arrays partial schematics
rev 1.3b copyright ? 1997 11861 western avenue garden grove, ca 92841 2 (714) 898-8121 fax: (714) 893-2570 absolute maximum ratings (note 1) peak collector current, i c (sg2000, 2020) ...................................................... (sg2010) ................................................................ operating junction temperature hermetic (j, l packages) ......................................... plastic (n, packages) ............................................... storage temperature range .......................... lead temperature (soldering 10 sec.) ......................... output voltage, v ce (sg2000, 2010 series) ................................................ (sg2020 series) .......................................................... input voltage, v in (sg2002,3,4) ............................................................... continuous input current, i in ........................................ 50v 95v 30v 25ma 500ma 600ma 150 c 150 c -65 c to 150 c 300 c note 1. values beyond which damage may occur. j package: thermal resistance- junction to case , q jc .................. 30c/w thermal resistance- junction to ambient , q ja ............... 80c/w n package: thermal resistance- junction to case , q jc .................. 40c/w thermal resistance- junction to ambient , q ja .............. 65c/w l package: thermal resistance- junction to case , q jc .................. 35c/w thermal resistance- junction to ambient , q ja ............ 120c/w thermal data note a. junction temperature calculation: t j = t a + (p d x q ja ). note b. the above numbers for q jc are maximums for the limiting thermal resistance of the package in a standard mounting configuration. the q ja numbers are meant to be guidelines for the thermal performance of the device/pc-board system. all of the above assume no ambient airflow. output voltage, v ce sg2000, sg2010 series .............................................. sg2020 series ............................................................. 50v 95v peak collector current, i c sg2000, sg2020 series ........................................... sg2010 series ........................................................ operating ambient temperature range sg2000 series - hermetic .......................... sg2000 series - plastic .................................. 50ma 500ma -55 c to 125 c 0 c to 70 c recommended operating conditions (note 2) note 2. range over which the device is functional. selection guide device v ce max i c max logic inputs sg2001 50v 500ma general purpose pmos, cmos sg2002 50v 500ma 14v-25v pmos sg2003 50v 500ma 5v ttl, cmos sg2004 50v 500ma 6v-15v cmos, pmos sg2011 50v 600ma general purpose pmos, cmos sg2012 50v 600ma 14v-25v pmos device v ce max i c max logic inputs sg2013 50v 600ma 5v ttl, cmos sg2014 50v 600ma 6v-15v cmos, pmos sg2015 50v 600ma high output ttl sg2021 95v 500ma general purpose pmos, cmos sg2023 95v 500ma 5v ttl, cmos sg2024 95v 500ma 6v-15v cmos, pmos rohs peak package solder reflow temp. (40 sec. max. exp.)...... 260c (+0, -5)
rev 1.3b copyright ? 1997 11861 western avenue garden grove, ca 92841 3 (714) 898-8121 fax: (714) 893-2570 electrical characteristics (unless otherwise specified, these specifications apply over the operating ambient temperatures for sg2000 series - hermetic - with -55 c t a 125 c and sg2000 series - plastic - with 0 c t a 70 c. low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) parameter units min. typ. max. limits test conditions all sg2002 sg2004 all sg2002 sg2003 sg2004 all sg2002 sg2003 sg2004 sg2001 all all all all all applicable devices temp. sg2001 thru sg2004 output leakage current (i cex ) collector - emitter (v ce(sat) ) input current (i in(on) ) (i in(off) ) input voltage (v in(on) ) d-c forward current transfer ratio (h fe ) input capacitance (c in ) (note 3) turn-on delay (tplh) turn-off delay (tphl) clamp diode leakage current (i r ) clamp diode forward voltage (v f ) t a = t min t a = t min t a = t min t a = 25c t a = 25c t a = 25c t a = t max t a = t max t a = t max t a = t max t a = t min t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t max t a = t min t a = 25c t a = 25c t a = 25c t a = 25c v ce = 50v v ce = 50v, v in = 6v v ce = 50v, v in = 1v i c = 350ma, i b = 850 m a i c = 200ma, i b = 550 m a i c = 100ma, i b = 350 m a i c = 350ma, i b = 500 m a i c = 200ma, i b = 350 m a i c = 100ma, i b = 250 m a i c = 350ma, i b = 500 m a i c = 200ma, i b = 350 m a i c = 100ma, i b = 250 m a v in = 17v v in = 3.85v v in = 5v v in = 12v i c = 500 m a v ce = 2v, i c = 300ma v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma 0.5 e in to 0.5 e out 0.5 e in to 0.5 e out v r = 50v i f = 350ma 480 650 240 650 25 500 1000 1.6 1.3 1.1 1.25 1.1 0.9 1.6 1.3 1.1 850 930 350 1000 50 15 250 250 1.7 100 500 500 1.8 1.5 1.3 1.6 1.3 1.1 1.8 1.5 1.3 1300 1350 500 1450 18 13 3.3 3.6 3.9 2.4 2.7 3.0 6.0 8.0 10 12 5.0 6.0 7.0 8.0 25 1000 1000 50 2.0 m a m a m a v v v v v v v v v m a m a m a m a m a v v v v v v v v v v v v v v v v pf ns ns m a v note 3. these parameters, although guaranteed, are not tested in production.
rev 1.3b copyright ? 1997 11861 western avenue garden grove, ca 92841 4 (714) 898-8121 fax: (714) 893-2570 parameter units min. typ. max. limits test conditions applicable devices temp. electrical chartacteristics (continued) sg2011 thru sg2015 output leakage current (i cex ) collector - emitter (v ce(sat) ) input current (i in(on) ) (i in(off) ) input voltage (v in(on) ) d-c forward current transfer ratio (h fe ) input capacitance (c in ) (note 3) turn-on delay (tplh) turn-off delay (tphl) clamp diode leakage current (i r ) clamp diode forward voltage (v f ) all sg2012 sg2014 all sg2012 sg2013 sg2014 sg2015 all sg2012 sg2013 sg2014 sg2015 sg2011 all all all all all t a = t min t a = t min t a = t min t a = 25c t a = 25c t a = 25c t a = t max t a = t max t a = t max t a = t max t a = t min t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t max t a = t max t a = t min t a = 25c t a = 25c t a = 25c t a = 25c v ce = 50v v ce = 50v, v in = 6v v ce = 50v, v in = 1v i c = 500ma, i b = 1100 m a i c = 350ma, i b = 850 m a i c = 200ma, i b = 550 m a i c = 500ma, i b = 600 m a i c = 350ma, i b = 500 m a i c = 200ma, i b = 350 m a i c = 500ma, i b = 600 m a i c = 350ma, i b = 500 m a i c = 200ma, i b = 350 m a v in = 17v v in = 3.85v v in = 5v v in = 12v v in = 3v i c = 500 m a v ce = 2v, i c = 500ma v ce = 2v, i c = 500ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 500ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 500ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 350ma v ce = 2v, i c = 500ma v ce = 2v, i c = 500ma v ce = 2v, i c = 500ma 0.5 e in to 0.5 e out 0.5 e in to 0.5 e out v r = 50v i f = 350ma i f = 500ma 480 650 240 650 1180 25 450 900 1.8 1.6 1.3 1.7 1.25 1.1 1.8 1.6 1.3 850 930 350 1000 1500 50 15 250 250 1.7 100 500 500 2.1 1.8 1.5 1.9 1.6 1.3 2.1 1.8 1.5 1300 1350 500 1450 2400 23.5 17 3.6 3.9 6.0 2.7 3.0 3.5 10 12 17 7.0 8.0 9.5 3.0 3.5 2.4 2.6 25 1000 1000 50 2.0 2.5 m a m a m a v v v v v v v v v m a m a m a m a m a m a v v v v v v v v v v v v v v v v v v pf ns ns m a v v note 3. these parameters, although guaranteed, are not tested in production.
rev 1.3b copyright ? 1997 11861 western avenue garden grove, ca 92841 5 (714) 898-8121 fax: (714) 893-2570 parameter units min. typ. max. limits test conditions applicable devices temp. electrical characteristics (continued) sg2021 thru sg2024 v ce = 95v v ce = 95v, v in = 1v i c = 350ma, i b = 850 m a i c = 200ma, i b = 550 m a i c = 100ma, i b = 350 m a i c = 350ma, i b = 500 m a i c = 200ma, i b = 350 m a i c = 100ma, i b = 250 m a i c = 350ma, i b = 500 m a i c = 200ma, i b = 350 m a i c = 100ma, i b = 250 m a v in = 3.85v v in = 5v v in = 12v i c = 500 m a v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 200ma v ce = 2v, i c = 250ma v ce = 2v, i c = 300ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 125ma v ce = 2v, i c = 200ma v ce = 2v, i c = 275ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma v ce = 2v, i c = 350ma 0.5 e in to 0.5 e out 0.5 e in to 0.5 e out v r = 95v i f = 350ma t a = t min t a = t min t a = t min t a = 25c t a = 25c t a = 25c t a = t max t a = t max t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t min t a = t min t a = t min t a = t min t a = t max t a = t max t a = t max t a = t max t a = t min t a = 25c t a = 25c t a = 25c t a = 25c all sg2024 all sg2023 sg2024 all sg2023 sg2024 sg2021 all all all all all output leakage current (i cex ) collector - emitter (v ce(sat) ) input current (i in(on) ) (i in(off) ) input voltage (v in(on) ) d-c forward current transfer ratio (h fe ) input capacitance (c in ) (note 3) turn-on delay (tplh) turn-off delay (tphl) clamp diode leakage current (i r ) clamp diode forward voltage (v f ) 650 240 650 25 500 1000 1.6 1.3 1.1 1.25 1.1 0.9 1.6 1.3 1.1 930 350 1000 50 15 250 250 1.7 100 500 1.8 1.5 1.3 1.6 1.3 1.1 1.8 1.5 1.3 1350 500 1450 13 3.3 3.6 3.9 2.4 2.7 3.0 6.0 8.0 10 12 5.0 6.0 7.0 8.0 25 1000 1000 50 2.0 m a m a v v v v v v v v v m a m a m a m a v v v v v v v v v v v v v v v pf ns ns m a v note 3. these parameters, although guaranteed, are not tested in production.
rev 1.3b copyright ? 1997 11861 western avenue garden grove, ca 92841 6 (714) 898-8121 fax: (714) 893-2570 characteristic curves figure 4. input characteristics - sg2002 figure 5. input characteristics - sg2003 figure 6. input characteristics - sg2004 figure 7. peak collector current vs. duty cycle figure 1. output characteristics figure 2. output current vs. input voltage figure 3. output current vs. input current
rev 1.3b copyright ? 1997 11861 western avenue garden grove, ca 92841 7 (714) 898-8121 fax: (714) 893-2570 note 1. contact factory for jan and desc product availability. 2. all parts are viewed from the top. 3. see selection guide for specific device types. connection diagrams & ordering information (see notes below) ambient temperature range part no. (note 3) packageconnection diagram 16-pin ceramic dip j - package sg2xxxj/883b -55 c to 125 c sg2023j/desc -55 c to 125 c jan2001j -55 c to 125 c jan2002j -55 c to 125 c jan2003j -55 c to 125 c jan2004j -55 c to 125 c sg2xxxj -55 c to 125 c 1 7 6 5 4 3 2 8 10 9 11 12 13 14 16 15 sg2003n 0 c to 70 c sg2023n 0 c to 70 c 16-pin plastic dip n - package 20-pin ceramic leadless chip carrier l- package sg2xxxl/883b -55 c to 125 c sg2xxxl -55 c to 125 c 18 4 9 319 20 1 2 14 15 17 16 8 7 6 5 13 12 11 10 n package: rohs compliant / pb-free transition dc: 0503 n package: rohs / pb-free 100% matte tin lead finish dw package: rohs compliant / pb-free transition dc: 0516 dw package: rohs / pb-free 100% matte tin lead finish dw package (not pictured) is 16-pin wide body soic, same pinout as j package pictured above.
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